
Measuring the active dopant concentration at nanoscale !
Doping, a fundamental property of semiconductor devices can be measured at nanoscale thanks to long term developments made by IPVF-C2N researchers. In a twin papers published in Phys. Rev. Applied they report how to calibrate cathodeluminescence (CL) measurements to analyze p-type and n-type GaAs thin films over a wide range of carrier concentrations (2×1017 to 1×1019 cm-3). Then, they applied this calibration to analyze the doping concentration profiles in GaAs NWs. High-resolution maps of the