Contract type: Fixed term
Starting date: September, 2020
Duration: 36 months
Working Place: Palaiseau
Education: PhD in materials science (or other relevant field)
Salary: Salary grid
Become an actor of the Energy Transition by joining a team driven by innovation and impact to address today’s most decisive challenges.
IPVF – Institut Photovoltaïque d’Île-de-France, is a global Research, Innovation and Education center, which mission is to accelerate energy transition through science & technology.
Gathering industrial PV leaders (EDF, Total, Air Liquide, Horiba and Riber) and world-renowned academic research teams (CNRS, Ecole Polytechnique), multi-disciplinary and international IPVF teams conduct research for clean energy technologies.
Supported by the French State, IPVF is labelled Institute for Energy Transition (ITE).
IPVF at a glance:
As part of its Program VI (proof of concepts for PV innovation breakthrough), IPVF is studying the construction of tandem cells combining a silicon back cell and a CIGS front cell. This innovative approach has the advantage of combining two established technologies, silicon technology and thin film technology, currently used in their monojunction form.
The chosen approach is to directly develop the CIGS cell on top of the silicon one, also serving as a growth substrate. The goal is to achieve tandem cells with more than 30% efficiency. For this it is necessary that the two cells have a yield of around 20% monojunction.
The candidate will directly report to the Deputy Programs Director of IPVF.
She/he will integrate a dynamic and talented team driven by innovation and results.
The CIGS cells are deposited in one or several stages by coevaporation or annealing of metal layers previously deposited under a sulfur or selenium atmosphere. The silicon substrate is functionalized to optimize the growth of CIGS epitaxially (which increases the optoelectronic quality) and to allow ohmic electrical contact during tandem operation. Tandem devices will be elaborated with operating silicon bottom cells from mainstream technologies completed by inserting a tunnel junction. The forecasted device structure will be p+ contact/p type Si/ n type Si/ tunnel junction n+p+/ P type CIGS/n type buffer layer/ n type ZnO.
An in-depth study of the properties of materials, interfaces and devices will aim at understanding and optimizing photovoltaic performances.
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