IPVF has just developed and patented a new solar cell architecture in III-V material by MBE growth (Molecular Beam Epitaxy).

This new cell, made of AlGaAs and InGaP, achieved a conversion efficiency of 18.7% certified by the Franhofer ISE CalLab. This efficiency exceeds the previous MBE world record of 16.6%.

This cell, with a bandwidth of 1.73eV, is particularly well suited to future tandem silicon-based cells under development at IPVF. Several development options have already been defined to further improve this performance and integrate these cells into a prototype tandem cell.

IPVF has just developed and patented a new solar cell architecture in III-V material by MBE growth (Molecular Beam Epitaxy).

This new cell, made of AlGaAs and InGaP, achieved a conversion efficiency of 18.7% certified by the Franhofer ISE CalLab. This efficiency exceeds the previous MBE world record of 16.6%.

This cell, with a bandwidth of 1.73eV, is particularly well suited to future tandem silicon-based cells under development at IPVF. Several development options have already been defined to further improve this performance and integrate these cells into a prototype tandem cell.